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| MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H * IT (AV) * IF (AV) * VRRM * * * * Average on-state current .......... 200A Average forward current .......... 200A Repetitive peak reverse voltage .......... 400/800/1200/1600V VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (RZ Type) APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3-6.5 3-M8 A1 20 (RZ) K1 K2 A2 A1 40 K2 SR K1 G1 CR K1 A2 K1 G1 6 18 30 68.5 16 32 150 18 30 68.5 16 (EZ) CR Tab#110, t=0.5 A1 K1 K2 SR A2 K1 G1 LABEL 7 23 9 32 39 (GZ) CR A1 K1 K2 SR A2 K1 G1 (RZ Type) (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 24 1200 1350 960 1200 1350 960 H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Ratings 310 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g Single-phase, half-wave 180 conduction, TC=67C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C 200 4000 6.7 x 104 100 10 3.0 10 5.0 4.0 -40~125 -40~125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=600A, instantaneous meas. Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 30 30 1.35 -- 3.0 -- 100 0.2 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W M Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg -- -- -- -- ELECTRICAL CHARACTERISTICS Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 4 7 Tj=125C 5 3 2 CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.5 4000 SURGE (NON-REPETITIVE) CURRENT (A) 3500 3000 2500 2000 1500 1000 500 1.0 1.5 2.0 2.5 0 1 23 5 7 10 20 30 50 70100 RATED SURGE (NON-REPETITIVE) CURRENT FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) 7 5 3 2 VGT=3.0V PG(AV)= 3.0W VFGM=10V PGM=10W TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 4 5 7 10 1 2 3 0.25 0.20 0.15 10 0 7 5 IGT= 100mA 3 2 Tj=25C 0.10 10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) 0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 320 AVERAGE POWER DISSIPATION (W) 280 240 200 160 120 80 40 0 0 40 80 120 160 200 CASE TEMPERATURE (C) 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 120 180 120 90 60 110 100 90 80 70 60 50 0 =30 40 80 60 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT =30 90 120 180 120 160 200 AVERAGE CURRENT (A) AVERAGE CURRENT (A) 400 AVERAGE POWER DISSIPATION (W) 350 300 250 200 150 100 50 0 0 40 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 360 RESISTIVE, INDUCTIVE 120 LOAD PER SINGLE 90 ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 40 =30 60 0 40 120 90 180 270 DC 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT DC 270 180 60 =30 80 120 160 200 240 280 320 AVERAGE CURRENT (A) 30 80 120 160 200 240 280 320 AVERAGE CURRENT (A) Feb.1999 |
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